Related papers: Magnetically Modulated Electrical Switching in an …
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Microwave absorption experiments employing a phase-sensitive external resistive detection are performed for a topical van der Waals antiferromagnet CrSBr. The field dependence of two resonance modes is measured in an applied field parallel…
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…
The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved.…
Colossal magnetoresistance (CMR) is an extraordinary enhancement of the electric conductivity in the presence of a magnetic field. It is conventionally associated with a field-induced spin polarization, which drastically reduces spin…
We derive analytical expressions for the spin wave frequencies and precession amplitudes in monolayer and antiferromagnetically coupled bilayer CrSBr under in-plane external magnetic fields. The analysis covers the antiferromagnetic,…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
Spin-driven multiferroics exhibit strong magnetoelectric coupling, with notable polarization changes under a magnetic field, but these effects are usually limited to high-Z magnetic insulators with low electronic polarization. In this work,…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
Among two-dimensional magnetic materials, CrSBr has attracted considerable attention owing to its coexistence of ferromagnetic and antiferromagnetic ordering, which depends sensitively on crystallographic orientation. An additional…
Altermagnets hold great potential for spintronic applications, yet their intrinsic spin dynamics and associated transport properties remain largely unexplored. Here, we investigate spin-resolved quantum transport in a multi-terminal setup…
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW…
Altermagnetism, a new phase of collinear spin-order sharing similarities with antiferromagnets and ferromagnets, has introduced a new guiding principle for spintronic/thermoelectric applications due to its direction-dependent magnetic…
We theoretically investigate magnon heat transport in an antiferromagnetic (AFM) insulator containing a domain wall (DW) in the presence of a magnetic field applied along the easy axis. We show that the intrinsic spin of the DW couples to…
The possibility of a strain-induced transformation from $g$-wave to $d$-wave altermagnetism was recently recently proposed for MnTe using a $k\cdot p$ perturbative model. In this work, we demonstrate such a transition in CrSb for a wider…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
van der Waals (vdW) magnets are receiving ever-growing attention nowadays due to their significance in both fundamental research on low-dimensional magnetism and potential applications in spintronic devices. High crystalline quality of vdW…