Related papers: Magnetically Modulated Electrical Switching in an …
Two-dimensional (2D) van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in…
Magnetoresistive effects are typically symmetric under magnetization reversal. However, nonlinear spin transport can give rise to unidirectional magnetoresistance in systems with strong spin-orbit interaction and broken inversion symmetry.…
CrSBr is a van der Waals magnetic semiconductor exhibiting antiferromagnetic order below 140 K. It has emerged as a promising platform for engineering 2D magnetism because its intertwined electronic, optical, and magnetic properties can be…
Excitons are fundamental excitations that govern the optical properties of semiconductors. Interacting excitons can lead to various emergent phases of matter and large nonlinear optical responses. In most semiconductors, excitons interact…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
Two dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Altermagnets host chirally split magnons that promise unique functionalities for information processing. However, their distinctive transport signatures, crucial for experimental identification and manipulation, remain elusive. Here, we…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
Two-dimensional van der Waals (vdW) magnetic materials are versatile platforms for tailoring electronic and magnetic properties, in which the insertion of chemical species into their interlayer gaps offers a powerful route to engineer…
Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly…
Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic…
In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To…
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin…