Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, with strong perpendicular magnetic anisotropy (PMA) and Curie temperatures exceeding room temperature, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW magnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as Jsw=1.69×106A/cm2 at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be ξDL = 0.093, using second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, future spintronic devices.
@article{arxiv.2306.14355,
title = {Current-induced deterministic switching of van der Waals ferromagnet at room temperature},
author = {Shivam N. Kajale and Thanh Nguyen and Corson A. Chao and David C. Bono and Artittaya Boonkird and Mingda Li and Deblina Sarkar},
journal= {arXiv preprint arXiv:2306.14355},
year = {2024}
}