Related papers: Temperature-Dependent Emission Polarization in GaN…
GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a…
Photoluminescence (PL) is a light-matter quantum interaction associated with the chemical potential of light formulated by the Generalized Planck's law. Without knowing the inherent temperature dependence of chemical potential, the…
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…
Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in…
Photoluminescence (PL) is a light matter quantum interaction associated with the chemical potential of light formulated by the Generalized Planck's law. Without knowing the inherent temperature dependence of chemical potential, the…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature…
Point-defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain…
We report a reversal in negative capacitance and voltage modulated light emission from AlGaInP based multi-quantum well electroluminescent diodes under temperature variation. Unlike monotonically increasing CW light emission with decreasing…
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different…
We report room-temperature observations of $\mathrm{Cu_{Zn}}$-$\mathrm{V_{S}}$ quantum emitters in individual ZnS:Cu nanocrystals (NCs). Using time-gated imaging, we isolate the distinct, $\sim$3-$\mu$s-long, red photoluminescence (PL)…
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a…
Quantum emitters in solid-state crystals have recently attracted a lot of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key…
The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge…
The influence has been studied of the ionization laser polarization on the effective temperature of an ultracold electron source, which is based on near-threshold photoionization. This source is capable of producing both high-intensity and…
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with…
Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at…
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 {\deg}C do not exhibit any detectable luminescence even at 10 K. In the…
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…
Photoluminescence (PL) is a fundamental light-matter interaction in which absorbed photons are re-emitted, playing a key role in science and engineering. It is commonly modeled by introducing a non-zero chemical potential into Planck's law…