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Related papers: Temperature-Dependent Emission Polarization in GaN…

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Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…

Mesoscale and Nanoscale Physics · Physics 2020-02-19 Maria Spies , Akhil Ajay , Eva Monroy , Bruno Gayral , M. den Hertog

Emission spectroscopy is an invaluable tool for probing the atmospheres of brown dwarfs and exoplanets, but interpretations based on flux spectra alone often suffer from degeneracies among temperature structure, chemical composition, and…

Earth and Planetary Astrophysics · Physics 2025-12-16 Fei Wang , Yuka Fujii , Ben Burningham , Jinping He

The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…

Materials Science · Physics 2009-11-11 Niladri Sarkar , Subhasis Ghosh

Photo-excited carriers, distributed among the localized states of self-assembled quantum dots, often show very anomalous temperature dependent photoluminescence characteristics. The temperature dependence of the peak emission energy may be…

Other Condensed Matter · Physics 2009-11-11 Bhavtosh Bansal

Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal…

Mesoscale and Nanoscale Physics · Physics 2013-07-16 Tomoyuki Horikiri , Yasuhiro Matsuo , Yutaka Shikano , Andreas Loeffler , Sven Hoefling , Alfred Forchel , Yoshihisa Yamamoto

In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…

The radiance of thermal emission, as described by Plancks law, depends only on the emissivity and temperature of a body, and increases monotonically with temperature rise at any emitted wavelength. Nonthermal radiation, such as…

Optics · Physics 2016-11-01 Assaf Manor , Matej Kurtulik , Carmel Rotschild

The polarization measurement is an important tool to probe the prompt emission mechanism in gamma-ray bursts (GRBs). The synchrotron photons can be scattered by cold electrons in the outflow via Compton scattering processes. The observed…

High Energy Astrophysical Phenomena · Physics 2014-11-19 Zhe Chang , Yunguo Jiang , Hai-Nan Lin

We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest…

Optics · Physics 2015-06-11 V. Liverini , L. Nevou , F. Castellano , A. Bismuto , M. Beck , Fabian Gramm , J. Faist

An experimental observation on irreversible thermal quenching and antiquenching behavior is reported for photoluminescence (PL) of ZnS/CdS:Mn/ZnS quantum well quantum dots (QWQDs) prepared with a reverse micelle method. The dual-color…

Materials Science · Physics 2013-09-20 X. Ding , R. C. Dai , Z. Zhao , Z. P. Wang , Z. Q. Sun , Z. M. Zhang , Z. J. Ding

By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…

Mesoscale and Nanoscale Physics · Physics 2015-01-16 Zhe Cheng , Zaoli Xu , Shen Xu , Xinwei Wang

Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which…

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…

Materials Science · Physics 2015-05-20 Muhammad Usman , Susannah Heck , Edmund Clarke , Peter Spencer , Hoon Ryu , Ray Murray , Gerhard Klimeck

We have investigated the temperature dependence of the photoluminescence spectra and average photoluminescence decay rate of CdTe quantum dot monolayers of different sizes as a function of concentration in the range 77 K to 296 K. It is…

Mesoscale and Nanoscale Physics · Physics 2016-09-16 Graham P. Murphy , Xia Zhang , A. Louise Bradley

A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot…

The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 N. T. Bagraev , L. E. Klyachkin , R. V. Kuzmin , A. M. Malyarenko

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL…

Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters…

In this study we report our numerical results on finite temperature non-interacting dynamical polarization function, plasmon modes and electron energy loss function of doped single layer gapped graphene within the random phase…

Mesoscale and Nanoscale Physics · Physics 2015-04-07 Digish K. Patel , Syed S. Z. Ashraf , Ami C. Sharma

Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…