Related papers: Temperature-Dependent Emission Polarization in GaN…
Raman and Photoluminescence (PL) experiments on correlated metallic La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ have been carried out using different excitation wavelengths as a function of temperature from 15 K to 300 K. Our data suggest a Raman mode…
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures.…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy of pillar-suspended single-walled carbon nanotubes has been measured for temperatures between 300 K and 5 K.
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at…
We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs…
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…
The demand for single photon sources at $\lambda~=~1.54~\mu$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical…
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the…
Entanglement-based quantum key distribution promises enhanced robustness against eavesdropping and compatibility with future quantum networks. Among other sources, semiconductor quantum dots can generate polarization-entangled photon pairs…
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and…
We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
We study the absorption and emission polarization of single semiconductor quantum dots in semiconductor nanowires. We show that the polarization of light absorbed or emitted by a nanowire quantum dot strongly depends on the orientation of…
The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable…
It has previously been shown that a dye-filled microcavity can produce a Bose-Einstein condensate of photons. Thermalization of photons is possible via repeated absorption and re-emission by the dye molecules. In this paper, we…
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…