Temperature dependent photoluminescence of single CdS nanowires

Thang Ba Hoang; L. V. Titova; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; J. L. Lensch; L. J. Lauhon

doi:10.1063/1.2357003

Temperature dependent photoluminescence of single CdS nanowires

Materials Science 2009-11-11 v1

Authors: Thang Ba Hoang , L. V. Titova , H. E. Jackson , L. M. Smith , J. M. Yarrison-Rice , J. L. Lensch , L. J. Lauhon

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Abstract

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS.

Keywords

CdS nanowires temperature dependent photoluminescence near-band edge emission defect states band edge structural uniformity

Cite

@article{arxiv.cond-mat/0606428,
  title  = {Temperature dependent photoluminescence of single CdS nanowires},
  author = {Thang Ba Hoang and L. V. Titova and H. E. Jackson and L. M. Smith and J. M. Yarrison-Rice and J. L. Lensch and L. J. Lauhon},
  journal= {arXiv preprint arXiv:cond-mat/0606428},
  year   = {2009}
}

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11 pages, 4 figures

Temperature dependent photoluminescence of single CdS nanowires

Abstract

Keywords

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