Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3.…
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…
Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction…
This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric…
Scanning tunneling spectroscopy suggests the formation of a two dimensional electron gas (2DEG) on the TiO2 terminated surface of undoped SrTiO3 single crystals annealed at temperature lower than 400 {\deg}C in ultra high vacuum conditions.…
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…
Understanding the evolution of structure and functionality through amorphous to crystalline phase transitions is critical for predicting and designing devices for application in extreme conditions. Here, we consider both aspects of…
Recent advances in electron microscopy trigger the question whether attosecond electron diffraction can resolve atomic-scale electron dynamics in crystalline materials in space and time. Here we explore the physics of the relevant…
The employment of magneto-optical materials to fabricate photonic crystals gives the unique opportunity to achieve optical tuning by applying a magnetic field. In this study we have simulated the transmission spectrum of a microcavity in…
A secondary $\beta$-relaxation process is often the dominant source of atomic dynamics below $T_\mathrm{g}$ in many glass forming systems. Recent studies reported the presence of $\beta$-relaxations in amorphous phase-change materials…
We report on results of observation of the focusing effect from the planes (220) of Gallium Arsenide (GaAs) crystals. We have compared the experimental results with the simulations of the focusing capability of GaAs tiles through a…
Metagrating is a new concept for wavefront manipulation that, unlike phase gradient metasurfaces, does not suffer from low efficiency and also has a less complicated fabrication process. In this paper, a compound metallic grating (a…
Atomistic studies are carried out to investigate the formation and evolution of defects during nanoindentation of a gold crystal. The results in this theoretical study complement the experimental investigations [J. D. Kiely and J. E.…
Nanothermochromic diffraction gratings based on the metal-insulator transition of $\mathrm{VO_2}$ are fabricated by site-selective ion beam implantation in a $\mathrm{SiO_2}$ matrix. Gratings were defined either (i) directly by spatially…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
The crystal structure parameters and the low-temperature magnetic moment of the HTSC cuprates YBa2Cu3O6+d, Y1-xCaxBa2Cu3O6+d, and Nd1+xBa2-xCu3O6+d, x = 0.2 are recorded after quenching them from the temperature of oxidative annealing. The…
A small angle neutron scattering study of the flux-line lattice in a large single crystal of untwinned YBa2Cu3O is presented. In fields parallel to the c-axis, diffraction spots are observed corresponding to four orientations of a hexagonal…