Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels…

Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 {\deg}C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain…

We have investigated the combined effect of low-energy self-implantation and thermal annealing on the near-surface defect concentration of ZnO single-crystals. Using ionoluminescence (IL), we demonstrate that a combination of low-energy…

This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy,…

We studied the microstructural and helium bubbling evolutions of Gd2Zr2O7 waste form with immobilized TRPO (50 wt%) under multi-energy He ion irradiation. Three structurally heterogeneous regions for the Gd2Zr2O7 waste form were found as a…

A topology optimization method is presented and applied to a blazed diffraction grating in reflection under conical incidence. This type of gratings is meant to disperse the incident light on one particular diffraction order and this…

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is…

We investigate the crystal electric field (CEF) excitations of Yb$^{3+}$ ions in powder samples of the triangular-lattice rare-earth-based antiferromagnet YbZn$_2$GaO$_5$ using inelastic neutron scattering (INS). Three CEF excitations from…

Geometrical metastability, observed in superconducting type I tin flat strips, has been previously proposed as a principle for particle detection. The energy deposition of an incoming beta-particle induces the rupture of the metastability…

KTaO3 single crystals with different orientations are used as substrates for the epitaxial growth of thin films and/or as hosts for two-dimensional electron gases. Due to the polar nature of the KTaO3(001) surface, one can expect…

Previously reported crystalline structures obtained by an iterative phase retrieval reconstruction of their diffraction patterns seem to be free from displaying any irregularities or defects in the lattice, which appears to be unrealistic.…

Near-beta titanium alloys have shown low Young's modulus and good strength, making them excellent implant candidates. However, their processing using thermomechanical routes in single phase beta region results in heterogeneous…

We exploit the long-ranged elastic fields inherent to confined nematic liquid crystals to assemble colloidal particles trapped at the liquid crystal interface into reconfigurable structures with complex symmetries and packings. Spherical…

We systematically investigate the magnetic properties and local structure of Ba2YIrO6 to demonstrate that Y and Ir lattice defects in the form of antiphase boundary or clusters of antisite disorder affect the magnetism observed in this…

The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…

We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3 were examined for two-photon absorption (TPA) coefficient,…

This paper presents simulations of the trajectories of high-energy ions through several bent crystal layers. At certain layer alignments volume reflection occurs from each layer and the resultant multiple volume reflection angle is…

The formation and electronic properties of nitrogen-related defect complexes in $\beta-Ga_2O_3$ are investigated using first-principles calculations. Starting from the energetically favorable $N_{i9}-N_{OI}$ configuration, nitrogen atoms…

Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…

Rapid solidification leads to unique microstructural features, where a less studied topic is the formation of various crystalline defects, including high dislocation densities, as well as gradients and splitting of the crystalline…