Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type…
The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching…
We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of \b{eta}-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV…
In the present work, a set of ZrO2 thin films have been deposited at 82 degree angle of deposition at several substrate rotation speeds and at 0 degree. The effect of substrate rotation on optical, structural, morphological properties and…
The intercalation of metal chlorides, and particularly iron chlorides, into graphitic carbon structures has recently received lots of attention, as it can not only protect this two-dimensional (2D) magnetic system from the effects of the…
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations…
Micro-channels of nanosized columnar tracks were planted by heavy-ion irradiation into superconducting microwave microstrip resonators that were patterned from YBa2Cu3O7-x thin films on LaAlO3 substrates. Three different ion fluences were…
This article proposes a picture of magnetized accretion structures formed during the mass transfer in the Beta Lyrae system. It is shown that the structure of the gaseous flows between the donor and the gainer is due to the spatial…
Focussed Ion Beam (FIB) milling is a mainstay of nano-scale machining. By manipulating a tightly focussed beam of energetic ions, often gallium (Ga+), FIB can sculpt nanostructures via localised sputtering. This ability to cut solid matter…
The electronic and optical parameters of {\gamma}-Al2O3 and {\theta}-Al2O3 have been studied by using the first principle within the framework of density function theory (DFT). The computational approach is based on full-potential…
Gold deposited on the Fe$_3$O$_4$(001) surface at room temperature was studied using Scanning Tunneling Microscopy (STM) and X-ray photoelectron spectroscopy (XPS). This surface forms a ($\sqrt2 \times \sqrt2$)R45$^{\circ}$ reconstruction,…
An algorithm is demonstrated that performs first-principles tracking of relativistic charged-particles. A covariant approach is used which relies on retarded vector potentials for trajectory integration instead of performing electromagnetic…
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…
The pyrochlore magnet $\rm Yb_2Ti_2O_7$ has been proposed as a quantum spin ice candidate, a spin liquid state expected to display emergent quantum electrodynamics with gauge photons among its elementary excitations. However, $\rm…
The structure of amorphous Cu$_2$GeTe$_3$ is investigated by a combination of anomalous x-ray scattering and extended x-ray absorption fine structure experiments. The experimental data are analyzed with a reverse Monte Carlo modeling…
The fast luminescence component of barium fluoride (BaF$_2$) crystals with a subnanosecond decay time can find wide application in particle physics and nuclear physics. However, the slow luminescence component with the 630~ns decay time…
We propose a three-stage model with Blandford-Znajek (BZ) and hyperaccretion process to interpret the recent observations of early afterglows of Gamma-Ray Bursts (GRBs). In the first stage, the prompt GRB is powered by a rotating black hole…
Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic $\delta$-doped layers were grown by molecular beam epitaxy near the GaAs surface, followed by…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
The specific heat due to line nodes in the superconducting gap of YBa2Cu3O7 has been obscured up to now by magnetic terms of extrinsic origin, even for high quality crystals. We report the specific heat of a new single crystal grown in a…