The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.
@article{arxiv.2306.01115,
title = {Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity},
author = {Zeyu Chi and Corinne Sartel and Yunlin Zheng and Sushrut Modak and Leonid Chernyak and Christian M Schaefer and Jessica Padilla and Jose Santiso and Arie Ruzin and Anne-Marie Goncalves and Jurgen von Bardeleben and Gerard Guillot and Yves Dumont and Amador Perez-Tomas and Ekaterine Chikoidze},
journal= {arXiv preprint arXiv:2306.01115},
year = {2023}
}