English

Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices

Applied Physics 2020-09-03 v1

Abstract

Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

Keywords

Cite

@article{arxiv.2009.01117,
  title  = {Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices},
  author = {M. A. Mastro and J. K. Hite and C. R. Eddy, and M. J. Tadjer and S. J. Pearton and F. Ren and J. Kim},
  journal= {arXiv preprint arXiv:2009.01117},
  year   = {2020}
}