In this article, we investigate the in-situ growth of Al2O3 on β-Ga2O3 using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800{\deg}C. The Al2O3 is grown within the same reactor as the β-Ga2O3, employing trimethylaluminum (TMAl) and O2 as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance-voltage (C-V) and photo-assisted C-V methods. The high-temperature deposited dielectric demonstrates an impressive breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown (TDDB) measurements. By modifying the dielectric deposition process to include a high-temperature (800{\deg}C) thin interfacial layer and a low-temperature (600{\deg}C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a breakdown field of 7.8 MV/cm.
@article{arxiv.2408.11342,
title = {Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$},
author = {Saurav Roy and Arkka Bhattacharyya and Carl Peterson and Sriram Krishnamoorthy},
journal= {arXiv preprint arXiv:2408.11342},
year = {2024}
}