Related papers: Dielectric Reliability and Interface Trap Characte…
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better…
The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of…
This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$\beta$-Ga$_2$O$_3$…
Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage and Thermal Dielectric Relaxation Current measurements, the…
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various…
Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality…
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the…
The crystallinity of $\beta$-Ga$_2$O$_3$ thin films grown by metal-organic chemical vapor deposition (MOCVD) is strongly influenced by reactor design and the resulting growth environment. In this work, we investigate the role of reactor…
The integration of diamond with $\beta$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $\beta$-Ga$_2$O$_3$ can lead to localized…
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V…
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010)…
This work demonstrates a novel in situ etching technique for $\beta$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on…
$\beta$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise…
Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C…
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and…
The crystallographic and magnetic properties of the cleavable 4d3 transition metal compound a-MoCl3 are reported, with a focus on the behavior above room temperature. Crystals were grown by chemical vapor transport and characterized using…
In this work, we develop a rapid reactive vapor transport technique to efficiently utilize limited isotopically pure precursors, particularly gaseous 18O2, and synthesize mm-scale, high-quality crystals within few-minute growth durations.…
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently…
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $\beta$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{\circ}$C) heavy…