Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010), (001), (110), and (011) orientation dependence of high…
In this work a strategy to grow diamond on $\beta$-Ga$_2$O$_3$ has been presented. The $\zeta$-potential of the $\beta$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The…
Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta…
The influence of room-temperature annealing on the parameters of the basal-plane electrical resistance of underdoped YBa$_2$Cu$_3$O$_{7-\delta}$ and HoBa$_2$Cu$_3$O$_{7-\delta}$ single crystals in the normal and superconducting states is…
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely…
We report on drastic change of vortex dynamics with increase of quenched disorder: for rather weak disorder we found a single vortex creep regime, which we attribute to a Bragg-glass phase, while for enhanced disorder we found an increase…
Ta films with tetragonal crystalline structure (beta-phase), deposited by magnetron sputtering on different substrates (steel, silicon and silicon dioxide), have been studied. In all cases, very highly preferred (001) orientation was…
We have grown cubic centimetre-size crystals of YBa2Cu3Ox suitable for neutron studies, by a top-seeded melt-growth technique. Growth conditions were optimized with an eye toward maximizing phase purity. It was found that the addition of 2%…
We report results and analysis of time-resolved photoinduced reflectivity experiments on the cuprate superconductor YBa2Cu3O6.5. The sample, which has Tc=45 K, was characterized by a high degree of purity and Ortho II ordering. The change…
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degenerately doped (N++) source/drain contact regrown by ozone…
In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal…
The beam-ion interaction is a potential limitation of beam performance in electron accelerators, especially where the beam emittance is of a great concern in future ultra-low emittance light source. "Conventionally", the beam instability…
The nonlinear polariton transmission, reflection and trapping by a defect in the resonantly absorbing Bragg grating (RABG) is demonstrated in numerical simulation. It is shown that the wide defect under some conditions could effectively…
The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but…
First-principles calculations have been performed to study the formation of defect complexes in Ti doped alpha-Al2O3 crystals. The formation energies of isolated Ti3+ and Ti4+ defects, pairs, triples and quadruples of Ti ions and Al…
We investigate the effects of alloying and growth orientation on the properties of the ultra-wide bandgap semiconductor \beta-Ga2O3 and pseudomorphic AlGaO alloy heterojunctions. Band offsets are computed from first principles using density…
We report on marked memory effects in the vortex system of twinned YBa2Cu3O7 single crystals observed in ac susceptibility measurements. We show that the vortex system can be trapped in different metastable states with variable degree of…
Lanthanide-doped fluorides are promising materials for advanced photonic and quantum applications due to their wide bandgap, low phonon energy, and chemical stability. In this work, we present a systematic comparative study of ytterbium…
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…