Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…
With an ongoing discussion on the oxygen diffusion along crystal defects remaining, it is difficult to study this phenomenon in Al containing intermetallic materials due to its rapid and passivating oxide formation. We report here the…
Cathodoluminescence spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in beta-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV,…
Bulk polycrystalline HgBa(2)Ca(2)Cu(3)O(x) materials were irradiated with 0.8 GeV protons to form randomly oriented columnar defects, by induced fission of Hg-nuclei. Proton fluences from 0 to 35 times 10^{16} cm^{-2} were used to install…
High temperature superconducting materials are being considered to generate the magnetic fields required for the confinement of plasma in fusion reactors. The present study aims to assess the microstructural degradation resulting from ion…
Over past decades, high energy X-ray diffraction techniques at synchrotron beamline offer us the unique possibility to follow concomitantly some mechanisms on the grain level in metallic materials. Crystal rotation, as one important factor…
The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $\alpha$-PbO platelets and the formation of the native point defects in $\alpha$-PbO crystal lattice are studied using first principles…
Defects in the surface region of a reducible oxide, as TiO2, have a profound effect on applications, while their nature is very much influenced by the possibility of small polaron formation. Here, we probe rutile (110) and anatase (101)…
For more than 30 years, the remarkable superconducting properties of REBa$_\textrm{2}$Cu$_\textrm{3}$O$_\textrm{7-x}$ (RE = rare earth) compounds have triggered research studies across the world. Accordingly, significant progresses have…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of…
Point defects are a universal feature of crystalline materials. Their identification is often addressed by combining experimental measurements with theoretical models. The standard approach of simulating defects is, however, prone to…
Beta-phase gallium oxide (beta-Ga2O3) is prone to the spontaneous formation of donor defects but poses a formidable challenge in achieving high-quality p-type doping, mainly due to its exceptionally low valence band maximum (VBM). In this…
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010)…
Disorder-induced ordering and unprecedentedly high radiation tolerance in $\gamma$-phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physics and electronic applications. Importantly, by far,…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based…
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to…
Optimizing thermal anneals of Si-implanted $\beta$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature…
We report a detailed Raman scattering study of the lattice dynamics in detwinned single crystals of the underdoped high temperature superconductor YBa2Cu3O6+x (x=0.75, 0.6, 0.55 and 0.45). Whereas at room temperature the phonon spectra of…
We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet (Y_3.4 Fe_4.6 O_12) films on (111) face of Gadolinium Gallium Garnet (GGG) single crystals by post-deposition annealing. Epitaxial conversion of the as-grown…