Related papers: Defect Accumulation in beta-Ga2O3 Implanted with Y…
BaBiO3 is a material where formally Bi4+ ions with the half-filled 6s-states form the alternating set of Bi3+ and Bi5+ ions resulting in a charge ordered insulator. The charge ordering is accompanied by the breathing distortion of the BiO6…
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local…
Tungsten is the main candidate material for plasma-facing armour components in future fusion reactors. Bombardment with energetic fusion neutrons causes collision cascade damage and defect formation. Interaction of defects with helium,…
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with…
The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods.…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
Rare-earth (RE) doped GaN is of interest for optoelectronics and spintronics and potentially for quantum applications. A fundamental understanding of the interaction between RE dopants and the semiconductor host is key to realizing the…
Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a…
This study reports atomic-scale characterization of structural defects in Yb2Ti2O7, a pyrochlore oxide whose subtle magnetic interactions is prone to small perturbations. Due to discrepancies in the reported magnetic ground states, it has…
Undoped and Cr doped \b{eta}-Ga2O3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arcsec for undoped Ga2O3 crystals whereas the 100 and 200 ppm of Cr doped…
Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect…
Defects in the lattice are of primal importance to tune graphene chemical, thermal and electronic properties. Electron-beam irradiation is an easy method to induce defects in graphene following pre-designed patterns, but no systematic study…
We have grown single crystals of the iron-based ladder material BaFe_2S_3, which is superconductive under high pressure, adopting different conditions. By comparing the behaviors of these samples, it is found that the in situ annealing…
The kinetics of the process of defect accumulation in rare-gas solids as a result of exciton self-trapping was studied using the selective vacuum ultraviolet photoluminescence method for monitoring of the crystal structure of the samples.…
Resonant optical excitation of apical oxygen vibrational modes in the normal state of underdoped YBa2Cu3O6+x induces a transient state with optical properties similar to those of the equilibrium superconducting state. Amongst these, a…
Ga$_2$O$_3$ is a wide-bandgap material of interest for a wide variety of devices, many of these requiring heterostructures, for instance to achieve carrier confinement. A common method to create such heterostructures is to alloy with…
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy diffraction patterns and reflectance anisotropy…
The effect of annealing at room temperature on the fluctuation conductivity (FLC) $\sigma^\prime(T)$ and pseudogap (PG) $\Delta^*(T)$ in the basal ab plane of $ReBa_2Cu_3O_{7-\delta}$ (Re = Ho) single crystals with a lack of oxygen has been…
This study presents a detailed examination of the lattice distortions introduced by glancing incidence Focussed Ion Beam (FIB) milling. Using non-destructive multi-reflection Bragg coherent X-ray diffraction we probe damage formation in an…
We report measurements of the photoinduced change in reflectivity of an untwinned single crystal of YBa2Cu3O6.5 in the ortho II structure. The decay rate of the transient change in reflectivity is found to decrease rapidly with decreasing…