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Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
A simple user-friendly software named PRISA has been developed to determine optical constants (refractive index and extinction co-efficient), dispersion parameters (oscillator energy and dispersion energy), absorption co-efficient, band gap…
A key optical parameter characterizing the existence of negative refraction in a thin layer of a composite material is the effective refractive index of an equivalent, homogenized layer with the same physical thickness as the initial…
We describe a high-speed interferometric method, using multiple angles of incidence and multiple wavelengths, to measure the absolute thickness, tilt, the local angle between the surfaces, and the refractive index of a fluctuating…
Finite-difference time-domain method is employed to investigate the optical properties of semiconductor thin films patterned with circular holes. The presence of holes enhances the coupling of the incident plane wave with the thin film and…
A simple method was developed to observe the interference patterns of the light reflected by the interfaces of thin liquid films. Employing a fluorescent microscope with epi-illumination, we collected the 2D patterns of interference fringes…
By knowing the phase and modules of the reflection coefficient in neutron reflectometry problems, a unique result for the scattering length density (SLD) of a thin film can be determined which will lead to the exact determination of type…
In-situ monitoring and calibration of nano-sculptured thin film thickness is a critical problem due to substrate tilt angle dependent porosity and mass flux. In this letter we present an analytical model for thickness dependence on…
Resistive solid state sensors are widely used in multiple applications, including molecular and gas detection. Absorption or intercalation of the target species varies the lattice parameters and an effective thickness of thin films, which…
Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray…
To design semiconductor-based optical devices, the optical properties of the used semiconductor materials must be precisely measured over a large band. Transmission spectroscopy stands out as an inexpensive and widely available method for…
Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity…
Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…
Uncertainties of refractive and group index in dispersion measurement by spectrally resolved white light interferometry are deeply analyzed. First, the contribution to uncertainty of the different parameters affecting both indices is…
Grazing incidence x-ray scattering provides nanostructural information for thin film samples, but single images generally do not provide information on film thickness or the full complex index of refraction. Additionally, for thin films…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at…
The low frequency complex impedance of a high resistivity 92 {\mu}{\Omega} cm and 100 nm thick TiN superconducting film has been measured via the transmission of several high sensitivity GHz microresonators, down to Tc/50. The temperature…
In transmission-mode terahertz time-domain spectroscopy (THz-TDS), the thickness of a sample is a critical factor that determines an amount of the interaction between terahertz waves and bulk material. If the interaction length is too…