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Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in…
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,\mu s}$, corresponding to Q = 5 million, and a highest observed value of ${501\,\mu s}$. We use materials analysis…
We have measured the heat conduction between 0.05 K and 1.0 K of high purity silicon wafers carrying on their polished faces a variety of thin dielectric films and polycrystalline thin metallic films. Using a Monte Carlo simulation to…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
We use molecular simulations to explore how sample dimensions and interfacial properties impact some generic aspects of the mechanical and structural behavior of nanoconfined materials. Specifically, we calculate the strain-dependent…
THz time domain spectroscopy is a powerful technique enabling the investigation of different materials in the far-infrared frequency range. Even if nowadays this technique is well established, its application to very thin films remains…
The analytic expressions for the maximum and minimum reflectance of optical films coated with gapped graphene are derived in the application region of the Dirac model with account of multiple reflections. The respective film thicknesses are…
Silicon carbide silicon carbide (SiC SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance of the oxide layer provide a way to better understand the oxidation process with…
For decades, mechanical resonators with high sensitivity have been realized using thin-film materials under high tensile loads. Although there have been remarkable strides in achieving low-dissipation mechanical sensors by utilizing high…
We propose a minimal tight-binding model for thin films made of topological crystalline insulator (TCI) on the basis of the mirror and discrete rotational symmetries. The basic term consists of the spin-orbit interaction describing a Weyl…
The need for semiconductor technology for crystalline silicon of the highest purity and homogeneity has provided samples exhibiting low optical absorption in the infrared range. Such silicon has become the basis for photonic elements in the…
Sensors based on the phenomenon of surface plasmon resonance have limited sensitivity, up to 123 degree/Refractive Index Unit, which restricts their applicability in detecting subtle changes gin biological media (around 10-5 RIU). To…
A novel method is proposed to measure the refractive indices (RIs) of the materials of different transparent solid state media. To exploit the advantage of non-contact measurement laser beam interferometry is used as an effective technique…
A multichannel thin-film sensor is implemented from a set of microstrip-coupled split-ring resonators (SRR's) with different dimensions. Each SRR exhibits a unique high-Q resonance that is sensitive to the presence of a sample in a…
A DC non-contact method for measuring the magnetostrictive strain in thin-films is demonstrated, achieving a state-of-the-art sensitivity of 0.1 ppm. In this method, an optical profilometer is used to measure the curvature induced in a…
Coherent detection and interferometry in the terahertz (THz) regime are key capabilities that enable applications ranging from astronomy to non-destructive testing. Phase-sensitive THz detection is currently achieved using nonlinear…
Thin-film superconductors with thickness 30 to 500 nm are used as non-equilibrium quantum detectors for photons, phonons or more exotic particles. One of the most basic questions in determining their limiting sensitivity is the efficiency…
It has been a widely growing interest in using silicon carbide (SiC)in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To…
Most integrated evanescent-field photonic sensors measure changes in either the real part or the imaginary part of the complex refractive index of the sample, i.e., refraction or absorption. Here we propose and experimentally demonstrate a…