Related papers: Reconfigurable SWCNT ferroelectric field-effect tr…
Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold…
This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…
TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…
Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT…
Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…
Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensions, cause substantial degradation in the accuracy of…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options…
Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM)…