Related papers: Structural and Electrical Properties of Grafted Si…
The Geiger photodiodes, or single photon avalanche photodiodes, for a radiation tolerant solid-state photomultiplier (SSPM) are being designed using Aluminum Gallium Arsenide (AlGaAs) and are less than 1 micrometer thick. Studies on the…
The realization of ultra-compact passive silicon photonic devices is becoming more and more important for the future large-scale photonic integration as desired for many systems. Although some compact silicon photonic devices have been…
The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning…
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative sensor technology, etc. Since the demonstration of optical…
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Silicon sensors with high time resolution can help particle identification in the International Linear Collider (ILC). We are studying Low Gain Avalanche Diodes (LGADs) as a high timing resolution sensor. As a step to develop LGADs, we are…
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was…
High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo…
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted diamond/GaN heterojunctions is therefore essential for…
Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…
We describe a micromachining process to allow the coupling of an array of single-mode telecommunication fibers to individual superconducting nanowire single photon detectors (SNSPDs). As proof of principle, we show the integration of four…
Astrophotonics is the next-generation approach that provides the means to miniaturize near-infrared (NIR) spectrometers for upcoming large telescopes and make them more robust and inexpensive. The target requirements for our spectrograph…
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for…
Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from…
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing…
Heterostructures including the members of the 6.1{\AA} semiconductor family (AlSb, GaSb, and InAs) are used in infrared optoelectronic devices as well as a variety of other applications. Short-period superlattices of these materials are…
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact…