The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
@article{arxiv.2306.15798,
title = {Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes},
author = {S. M. Mazza and G. Saito and Y. Zhao and T. Kirkes and N. Yoho and D. Yerdea and N. Nagel and J. Ott and M. Nizam and M. Leite and M. Moralles and H. F. -W. Sadrozinski and A. Seiden and B. Schumm and F. McKinney-Martinez and G. Giacomini and W. Chen},
journal= {arXiv preprint arXiv:2306.15798},
year = {2023}
}