Related papers: Structural and Electrical Properties of Grafted Si…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
Position-sensitive-detectors (PSDs) based on lateral photoeffect has been widely used in diverse applications, including optical engineering, aerospace and military fields. With increasing demand in long distance, low energy consumption,…
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…
High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed…
The absorption to mass ratio of the infrared arrays is enhanced to approximately 1.33 to 7.33 times larger than the previously reported structures by incorporating two design characteristics: first, the coupling of evanescent fields in the…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to…
The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at…
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these…
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for…
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed…
Free-running InGaAs/InP single-photon detectors (SPDs) based on negative-feedback avalanche diodes (NFADs) are the key components for applications requiring asynchronous single-photon detection in the near-infrared region. From the…