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Silicon direct bonding offers flexibility in the design and development of Si optics by allowing manufacturers to combine subcomponents with a potentially lossless and mechanically stable interface. The bonding process presents challenges…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research…
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an…
InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable and user-friendly…
One promising application of photonics to astronomical instrumentation is the miniaturization of near-infrared (NIR) spectrometers for large ground- and space-based astronomical telescopes. Here we present new results from our effort to…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
We demonstrate an ultra-compact waveguide taper in Silicon Nitride platform. The proposed taper provides a coupling-efficiency of 95% at a length of 19.5 um in comparison to the standard linear taper of length 50 um that connects a 10 um…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity,…
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…
Visible light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging and displays. Among the existing photonic…
We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation…
High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as…
InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…
Configurations capable of maximizing both absorptance and polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors (SNSPDs)…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…