We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a∼100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules
@article{arxiv.1905.04639,
title = {Waveguide-integrated, plasmonic enhanced graphene photodetectors},
author = {J. E. Muench and A. Ruocco and M. A. Giambra and V. Miseikis and D. Zhang and J. Wang and H. F. Y. Watson and G. C. Park and S. Akhavan and V. Sorianello and M. Midrio and A. Tomadin and C. Coletti and M. Romagnoli and A. C. Ferrari and I. Goykhman},
journal= {arXiv preprint arXiv:1905.04639},
year = {2020}
}