Related papers: Silicon-integrated scandium-doped aluminum nitride…
We show operation of a silicon MEMS based narrow-band optical modulator with large modulation depth by improving the electro-mechanical transducer. We demonstrate an application of the narrowband optical modulator as both the filter and…
Recent decades have seen significant advancements in integrated photonics, driven by improvements in nanofabrication technology. This field has developed from integrated semiconductor lasers and low-loss waveguides to optical modulators,…
Electro-optical modulators are essential components in optical communication systems. They encode an electrical waveform onto an optical carrier. However, their performance is often limited by inherent electro-optic processes and…
Electro-optic (E/O) modulators are crucial for optical communication but face a trade-off between modulation bandwidth and efficiency. A small footprint could reduce the capacitance and increase the bandwidth, however, this usually results…
Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy,…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
Aluminum nitride and silicon nitride have recently emerged as important nonlinear optical materials in integrated photonics respectively for their quadratic and cubic optical nonlinearity. A composite aluminum nitride and silicon nitride…
Light-trapping mechanisms with plasmonics are an excellent way to increase the efficiency of photovoltaics. Plasmonic dimer-shaped nanoparticles are effective in light absorption and scatterings, and there is hardly any research on dimer…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Adaptive optics (AO) is a powerful image correction technique with proven benefits for many life-science microscopy methods. However, the complexity of adding a reflective wavefront modulator and a wavefront sensor into already complicated…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane…
Molybdenum (Mo) due to its optimal structural, physical, and acoustic properties find application as electrode material in aluminum scandium nitride (AlScN) and aluminum nitride (AlN) based bulk acoustic wave (BAW) resonators. Epitaxial Mo…
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified…
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and…
Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated…
We present a study of linearized \c{hi}^((3)) based electro-optic modulation beginning with an analysis of the nonlinear polarizability, and how to linearize a modulator based on the quadratic third order DC-Kerr effect. Then we perform a…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…