Related papers: Silicon-integrated scandium-doped aluminum nitride…
We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8{\mu}m x 1{\mu}m with a 100nm x…
Reconfigurable photonic devices capable of routing the flow of light enable flexible integrated-optic circuits that are not hard-wired but can be externally controlled. Analogous to free-space spatial light modulators, we demonstrate…
Reconfigurable integrated chips of photonic components and networks are envisaged to play a key role in realizing highly efficient integrated photonic information processing. Electrothermally modulated optical effect (ETMOE) is a powerful…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…
High-speed laser frequency actuation is critical in all applications employing lasers and frequency combs, and is prerequisite for phase locking, frequency stabilization and stability transfer among multiple optical carriers. Soliton…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
We demonstrate high optical quality factors in aluminum nitride (AlN) photonic crystal nanobeam cavities. Suspended AlN photonic crystal nanobeams are fabricated in sputter-deposited AlN-on-insulator substrates using a self-protecting…
The mid-infrared (MIR) spectral regime is central to applications including remote sensing, precision spectroscopy, higher harmonic generation, and free-space optical communication. However, coherent and broadband MIR modulation remains…
We propose a low noise, triply-resonant, electro-optic (EO) scheme for quantum microwave-to-optical conversion based on coupled nanophotonics resonators integrated with a superconducting qubit. Our optical system features a split resonance…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $\chi^\left(2\right)$ and $\chi^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it…
This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important…
Modern communication networks demand ever-increasing transmission bandwidth, placing stringent requirements on low-cost, high-performance electro-optic modulators. Substantial advances have been made in integrated photonics employing…
In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using…
Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the…
Polymer based electro-optic modulators have shown great potentials in high frequency analog optical links. Existing commercial LiNibO3 Mach-Zehnder modulators have intrinsic drawbacks in linearity to provide high fidelity communication. In…
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to…