A systematic evaluation of Silicon-rich Nitride Electro-optic Modulator design and tradeoffs
Abstract
We present a study of linearized \c{hi}^((3)) based electro-optic modulation beginning with an analysis of the nonlinear polarizability, and how to linearize a modulator based on the quadratic third order DC-Kerr effect. Then we perform a numerical study, designing a linearized \c{hi}^((3)) phase modulator utilizing Silicon-rich Nitride where we show that a phase modulator with a V_{\pi} L_{\pi} metric of 1 Vcm or a V_{\pi} L_{\pi} {\alpha} metric of 37VdB is achievable and a V_{\pi} L_{\pi} as low as 0.5Vcm in a push-pull Mach Zehnder Interferometer. This numerical study argues that linearized modulation exploiting the \c{hi}^((3)), and \c{hi}^((2)) as applicable, is possible and can allow for high-speed modulation using a CMOS compatible material platform.
Keywords
Cite
@article{arxiv.2309.10991,
title = {A systematic evaluation of Silicon-rich Nitride Electro-optic Modulator design and tradeoffs},
author = {Alex Friedman and Dmitrii Belogolovskii and Andrew Grieco and Yeshaiahu Fainman},
journal= {arXiv preprint arXiv:2309.10991},
year = {2023}
}