We demonstrate the DC-Kerr effect in PECVD Silicon-rich Nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, \c{hi}^((3)), as high as (6 +/- 0.58)x10-19 m2/v2. We employ spectral shift versus applied voltage measurements in a racetrack ring resonator as a tool by which to characterize the nonlinear susceptibilities of these films. In doing so we demonstrate a \c{hi}^((3)) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase-shifters while maintain a low thermal budget using a deposition technique readily available in CMOS process flows.
@article{arxiv.2107.00104,
title = {Demonstration of the DC-Kerr Effect in Silicon-Rich Nitride},
author = {Alex Friedman and Hani Nejadriahi and Rajat Sharma and Yeshaiahu Fainman},
journal= {arXiv preprint arXiv:2107.00104},
year = {2021}
}