Thermo-Optic Properties of Silicon-Rich Silicon Nitride for On-chip Applications
Abstract
We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65+/-0.08) x 10-4 K-1. Furthermore, we realize an SRN Multi-Mode Interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
Keywords
Cite
@article{arxiv.2005.13348,
title = {Thermo-Optic Properties of Silicon-Rich Silicon Nitride for On-chip Applications},
author = {Hani Nejadriahi and Alex Friedman and Rajat Sharma and Steve Pappert and Yeshaiahu Fainman and Paul Yu},
journal= {arXiv preprint arXiv:2005.13348},
year = {2023}
}
Comments
10 pages, 7 figures, submitted to a journal