Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
@article{arxiv.1209.2987,
title = {Infrared dielectric properties of low-stress silicon nitride},
author = {Giuseppe Cataldo and James A. Beall and Hsiao-Mei Cho and Brendan McAndrew and Michael D. Niemack and Edward J. Wollack},
journal= {arXiv preprint arXiv:1209.2987},
year = {2012}
}