Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
@article{arxiv.1603.04815,
title = {Infrared dielectric properties of low-stress silicon oxide},
author = {Giuseppe Cataldo and Edward J. Wollack and Ari D. Brown and Kevin H. Miller},
journal= {arXiv preprint arXiv:1603.04815},
year = {2021}
}