Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime
Materials Science
2009-11-10 v1
Abstract
We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.
Keywords
Cite
@article{arxiv.cond-mat/0403105,
title = {Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime},
author = {R. Aguado and M. P. López-Sancho and Jairo Sinova and L. brey},
journal= {arXiv preprint arXiv:cond-mat/0403105},
year = {2009}
}
Comments
6 pages, 6 figures included