Related papers: Accurate Time-segmented Loss Model for SiC MOSFETs…
In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
Two-dimensional numerical simulation of switching processes for equivalent silicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOS thyristors (HSMT) has been performed. It is shown that the energy of switching losses…
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…
An equation based reduced order model applicable to generalized heat equation and thermal simulations of power electronics systems developed in commercial CFD tools, is presented in this work. The model considers the physics of heat…
The optimal design of power converters requires accurate knowledge of the dissipation elements of its system to achieve the desired performance and security requirements. Calorimetric methods have surpassed classical electrical methods for…
The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred…
Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…
As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…
Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about…
Single-event burnout (SEB) in silicon carbide (SiC) power MOSFETs is often characterized by deterministic threshold quantities. Near the boundary between recovery and runaway, stochastic variability can make this threshold description…
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing…
Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly…
The aim of this work is to design and implement an embedded system capable to characterize some relevant figures of merit of Gallium Nitride and Silicon Carbide transistors in a wide range of frequencies. In particular, the designed system…
The junction temperature is a very important parameter for monitoring power electronics converters based on MOSFET transistors. They offer the possibility of switching at relatively higher frequencies than other transistors like IGTBTs.…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…