Related papers: Accurate Time-segmented Loss Model for SiC MOSFETs…
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…
A three-way coupled thermo-mechanical fracture model is presented to predict the damage of brittle ceramics, in particular {\alpha}-SiC, over a wide range of temperatures (20-1400 C). Predicting damage over such a range of temperatures is…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
By combining Three Dimensional Integrated Circuits with the Network-on-Chip infrastructure to obtain 3D Networks-on-Chip (3D-NoCs), the new on-chip communication paradigm brings several advantages on lower power, smaller footprint and lower…
As the technology node continues to shrink, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become valid candidates for the 3nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and…
Power systems, including synchronous generator systems, are typical systems that strive for stable operation. In this article, we numerically study the fault transient process of a synchronous generator system based on the first benchmark…
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…
Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) < 60 mV/decade has been proposed to overcome Boltzmann tyranny in its ballistic regime. However the scattering, especially by inelastic scattering may lead…
The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material…
Assuming that Soft Magnetic Material is a Complex System and expressing this feature by scaling invariance of the power loss characteristic, the unified model of the temperature dependence of Core Losses in Soft Magnetic Materials Exposed…
A calculation method for engine temperatures is presented. Special focus is placed on the transient and scattering boundary conditions within the combustion chamber, including fired and coasting conditions, as well as the dynamic heat…
The thermal sensitive electrical parameter (TSEP) method is crucial for enhancing the reliability of power devices through junction temperature monitoring. The TSEP method comprises three key processes: calibration, regression, and…
Wireless power transfer has been proposed as a key technology for the foreseen machine type networks. A main challenge in the research community lies in acquiring a simple yet accurate model to capture the energy harvesting performance. In…
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a…
In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
Simultaneous wireless information and power transfer (SWIPT) relay networks represent a paradigm shift in the development of wireless networks, enabling simultaneous radio frequency (RF) energy harvesting (EH) and information processing.…
The development of new detectors based on Silicon Carbide (SiC) is currently a topic of interest within the scientific community. The significant features of SiC make it highly promising for detecting charged particles, neutrons, and…
In this paper, a simple algorithm for detailed system-level thermal noise analysis is developed, demonstrated, and verified. This method uses noise-wave theory and noise covariance matrices to cascade noise and scattering parameters of…