Related papers: Accurate Time-segmented Loss Model for SiC MOSFETs…
This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal…
Modern package designs make use of technologies such as backside power delivery (BSPD) and 3D stacked chiplets that require accounting for the heterogeneity in back end of the line (BEOL) structures in hot-spot prediction. Multiscale…
The modern power system is evolving with increasing penetration of power electronics introducing complicated electromagnetic phenomenon. Electromagnetic transient (EMT) simulation is essential to understand power system behavior under…
An innovative and accurate dynamic Compact Thermal Model extraction method is proposed for multi-chip power electronics systems. It accounts for thermal coupling between multiple heat sources. Transient electro-thermal coupling can easily…
Semiconductors are widely used in various applications and critical infrastructures. These devices have specified lifetimes and quality targets that manufacturers must achieve. Lifetime estimation is conducted through accelerated stress…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of…
In this work we present a modeling tool designed to estimate the hysteretic losses in the coils of an electric generator with coils made of coated conductor tapes during transient operation. The model is based on a two-stage segregated…
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current…
Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this…
Thermal Energy Storage (TES) devices, which leverage the constant-temperature thermal capacity of the latent heat of a Phase Change Material (PCM), provide benefits to a variety of thermal management systems by decoupling the absorption and…
Raman thermometry is advantageous for measuring the thermal transport of low-dimensional materials due to its non-contact nature. Transient Raman methods have improved the accuracy of steady-state Raman thermometry by removing the need for…
In this paper we report on a novel simulation tool designed for the 3D coupled electro-thermal simulation of Smart Power Mosfets, that is a tool capable of taking into account not only the electrical (and thermal) behaviour of the power…
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…
Thermo-optic microheater is indispensable in silicon photonic devices for smart and reconfigurable photonic networks. Much efforts have been made to improve the metallic microheater performance in the past decades. However, because of the…
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…
Code index modulated multi-carrier M-ary differential chaos shift keying (CIM-MC-M-DCSK) system not only inherits low-power and low-complexity advantages of the conventional DCSK system, but also significantly increases the transmission…
Electrical circuits with transient elements can be good examples of systems where non--steady irreversible processes occur, so in the same way as a steady state energy converter, we use the formal construction of the first order…
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…