Related papers: Enhanced Spin Hall Ratio in Two-Dimensional Semico…
We generalize the spin Hall angle to laser pulses of finite frequencies in the linear response regime and predict a giant optical spin Hall effect. Namely, for certain transition metal elements, at particular frequencies, the spin current…
Recently a positive spin Hall angle (SHA) of 0.021, was observed experimentally in nonmagnetic CuIr alloys [Niimi et al., Phys. Rev. Lett. 106, 126601 (2011)] and attributed predominantly to an extrinsic skew scattering mechanism, while a…
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (${\theta}_{SH}$ > 1) is limited to a few…
Spin Hall nano-oscillators (SHNOs) utilize pure spin currents to drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and…
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the N\'eel vector in 2D antiferromagnets remains…
The orbital Hall effect provides an alternative means to the spin Hall effect to convert a charge current into a flow of angular momentum. Recently, compelling signatures of orbital Hall effects have been identified in 3d transition metals.…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not…
MoS$_2$, one of transition metal dichalcogenides (TMDs), has caused a lot of attentions for its excellent semiconductor characteristics and potential applications. Here, based on the density functional theory methods, we predict a novel 2D…
We report a large spin Hall effect in the 3$d$ transition metal alloy Ni$_x$Cu$_{1-x}$ for $x\in\left\{ 0.3,0.75\right\} $, detected via the ferromagnetic resonance of a Permalloy (Py = Ni$_{80}$Fe$_{20}$) film deposited in a bilayer with…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS$_2$, lead strong couplings…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
The spin Hall effect (SHE) is a generation of spin polarization for moving spin carriers in materials under an external electric field and has been observed in semiconductors, metals, and insulators at or below room temperature. Recent…
A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have…
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup…
Using a combination of heat pulse and nuclear magnetic resonance techniques we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at $\nu_T = 1$ in bilayer electron gases from the weakly coupled…
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems…
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction…