Related papers: Enhanced Spin Hall Ratio in Two-Dimensional Semico…
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a…
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In…
We calculate the spin-Hall conductivity for a two-dimensional electron gas within the self-consistent Born approximation, varying the strength and type of disorder. In the weak disorder limit we find both analytically and numerically a…
An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The…
Quantum spin Hall (QSH) insulators possess edge states that are topologically protected from backscattering. However, known QSH materials (e.g. HgTe/CdTe and InAs/GaSb quantum wells) exhibit very small energy gap and only work at low…
Designing materials with enhanced spin charge conversion, i.e., with high spin Hall conductivity (SHC) and low longitudinal electric conductivity (hence large spin Hall angle (SHA)), is a challenging task, especially in the presence of a…
The magnetic spin Hall effect arises from a reactive counterpart of the dissipative spin response that is responsible for the ordinary spin Hall effect. This interpretation is supported by the dependence of spin Hall effect signals on the…
The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall…
Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and…
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field.…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…
$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…
Manipulation of the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque requires high spin Hall conductivity of the heavy metal. We measure inverse spin Hall voltage using a co-planar wave-guide based broadband…
The quaternary arsenide compounds XCuYAs (X=Zr, Hf; Y= Si, Ge) belong to the vast family of the 1111-type quaternary compounds, which possess outstanding physical properties ranging from $p$-type transparent semiconductors to…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
The formation of a superstructure - with a related Moir\'e pattern - plays a crucial role in the extraordinary optical and electronic properties of twisted bilayer graphene, including the recently observed unconventional superconductivity.…
We report a giant spin Hall effect (SHE) in {\beta}-W thin films. Using spin torque induced ferromagnetic resonance with a {\beta}-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |\theta|=0.30\pm0.02, large enough for an…
The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with long Shockley-Reed-Hall lifetime is calculated theoretically taking into account the concentration gradient of excess electron-hole pairs in…