Related papers: Enhanced Spin Hall Ratio in Two-Dimensional Semico…
The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt$|$Py…
Generally, stacking two monolayer type-I quantum spin Hall insulators gives rise to a trivial insulator. However, whether or not stacking two type-II quantum spin Hall insulators results in a trivial insulator has not yet been explored. In…
We study the properties of the "spin quantum Hall fluid" - a novel spin phase with quantized spin Hall conductance that is potentially realizable in superconducting systems with unconventional pairing symmetry. A simple realization is…
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably,…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
We present a numerical study of the spin Hall effect in a two-dimensional hole gas (2DHG) system in the presence of disorder. We find that the spin Hall conductance (SHC), extrapolated to the thermodynamic limit, remains finite in a wide…
Topological insulating states in two-dimensional (2D) materials are ideal systems to study different types of quantized response signals due to their in gap metallic states. Very recently, the quantum spin Hall (QSH) effect was discovered…
It is generally believed that conductivity platform can only exist in insulator with topological nontrivial bulk occupied states. Such rule exhibits in two dimensional quantum (anomalous) Hall effect, quantum spin Hall effect, and three…
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…
A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
We study the role of the Hall current and electron inertia in collisionless magnetic reconnection within the framework of full two-fluid MHD. At spatial scales smaller than the electron inertial length, a topological change of magnetic…
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated…
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require…
The quantum spin Hall (QSH) effect, first predicted in graphene by Kane and Mele in 2004, has emerged as a prototypical platform for exploring spin-orbit coupling, topology, and electronic interactions. Initially realized experimentally in…
Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $\rho$, Hall coefficient $R_{H}$,…
We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an \emph{in situ} grown back gate, which allows tuning the carrier density $n$. At low $n$, when all electrons are confined to the…
Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers, and static electric or magnetic fields.…