It is generally believed that conductivity platform can only exist in insulator with topological nontrivial bulk occupied states. Such rule exhibits in two dimensional quantum (anomalous) Hall effect, quantum spin Hall effect, and three dimensional topological insulator. In this letter, we propose a spin Hall conductivity (SHC) platform in a kind of three dimensional metallic materials with triply degenerate points around the Fermi level. With the help of a four bands \textbf{k}⋅\textbf{p} model, we prove that SHC platform can form between ∣23,±23⟩ and ∣21,±21⟩ states of metallic system. Our further ab initio calculations predict that a nearly ideal SHC platform exhibits in an experimentally synthesized TaN. The width of the SHC platform reaches up to 0.56 eV, hoping to work under high temperature. The electrical conductivity tensor of TaN indicates that its spin Hall angle reaches -0.62, which is larger than many previous reported materials and make it an excellent candidate for producing stable spin current.
@article{arxiv.2101.01328,
title = {Intrinsic Spin Hall Conductivity Platform in Triply Degenerate Semimetal},
author = {Zhengchun Zou and Pan Zhou and Rui Tan and Wenqi Li and Zengsheng Ma and Lizhong Sun},
journal= {arXiv preprint arXiv:2101.01328},
year = {2021}
}