Related papers: Enhanced Spin Hall Ratio in Two-Dimensional Semico…
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like…
We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
The Spin Hall Effect (SHE) is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the Spin Hall Angle, the characteristic parameter of the yield of this transformation, have been…
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the…
A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure…
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane.…
We analyze the Landau level (LL) structure and spin Hall effect in a MoS2 trilayer. Due to orbital asymmetry, the low-energy Dirac fermions become heavily massive and the LL energies grow linearly with $B$, rather than with $\sqrt{B}$.…
The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals…
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we…
Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse…
Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…
We report a study of the spin-to-charge current conversion in compressively strained Ge1-xSnx alloy epilayers as a function of the Sn concentration by means of the inverse spin Hall effect (ISHE). The spin current is generated by…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of…