Related papers: Experimental analysis of variability in WS$_2$-bas…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower…
We have calculated the temperature dependence of the conductance variation ($\delta S(T)$) of mesoscopic superconductor normal metal(S/N) structures, in the diffusive regime, analysing both weak and strong proximity effects. We show that in…
Dynamical structural defects exist naturally in a wide variety of solids. They fluctuate temporally, and hence can deteriorate the performance of many electronic devices. Thus far, the entities of such dynamic objects have been identified…
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…
Molybdenum disulfide (MoS$_2$) is one of the most broadly utilized solid lubricants with a wide range of applications, including but not limited to those in the aerospace/space industry. Here we present a focused review of solid lubrication…
The Hall conductivity in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional organic conductors (TMTSF)$_2$X at a finite temperature is calculated. The temperature dependence of the Hall conductivity is…
The newly discovered BaPt$_2$As$_2$ shows a structural distortion at around 275~K, followed by the emergence of superconductivity at lower temperatures. Here we identify the presence of charge density wave (CDW) order at room temperature…
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…
Microwave Kinetic Inductance Detectors (MKIDs) provide highly multiplexed arrays of detectors that can be configured to operate from the sub-millimeter to the X-ray regime. We have examined two tungsten silicide alloys (W5Si3 and WSi2),…
The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable…
In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been…
This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray…
Molybdenum disulfide (MoS2) is a highly attractive 2D material due to its interesting electronic properties. Recent experimental advances confirm the possibility of further tuning the electronic properties of MoS2 through the fabrication of…
In recent years, the 'kirigami' technique has gained significant attention for creating meta-structures and meta-materials with exceptional characteristics, such as unprecedented stretchability. These properties, not typically inherent in…
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree…
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…
The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…