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In strongly correlated quantum materials, electrons behave in ways that often extend beyond the confines of conventional Fermi-liquid theory. Interesting results include the observation of low-temperature metallic behavior in systems that…
We investigate electronic instabilities in 2H-TaS\textsubscript{2} and a self-intercalated variant, 2H$^\dagger$-Ta\textsubscript{1+$\delta$}S\textsubscript{2}. In conventional samples, which we determine to be slightly hole-doped, spectral…
Portable computing devices, which include tablets, smart phones and various types of wearable sensors, experienced a rapid development in recent years. One of the most critical limitations for these devices is the power consumption as they…
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
There has been a massive growth in the study of transition metal dichalcogenides (TMDs) over the past decade, based upon their interesting and unusual electronic, optical and mechanical properties, such as tuneable and strain-dependent…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…
Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging.…
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states…
Monolayer WS2 has been a competitive candidate in electrical and optoelectronic devices due to its superior optoelectronic properties. To tackle the challenge of thermal management caused by the decreased size and concentrated heat in…
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions…
Molybdenum sulfides are in the spotlight of materials science thanks to their interesting properties for applications in optoelectronics, nanocomposites, lubricants, and catalysis. The structural characterization of Molybdenum sulfides is a…
Transition metal dichalcogenide materials $MX_2 (M=Mo,W;X=S,Se)$ are being thoroughly studied due to their novel two-dimensional structure, that is associated with exceptional optical and transport properties. From a computational point of…
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…
The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as…
We present thermal conductivity measurements performed in three short-period (GaAs)_9(AlAs)_5 superlattices. The samples were grown at different temperatures, leading to different small scale roughness and broadening of the interfaces. The…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
The thermal conductivities of pristine and defective tungsten diselenide (WSe2) are investigated by using equilibrium molecular dynamics method. The thermal conductivity of WSe2 increases dramatically with size below a characteristic with…