English

Reply to Comment (cond-mat/0311174)

Strongly Correlated Electrons 2007-05-23 v2 Mesoscale and Nanoscale Physics

Abstract

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, T\tau >1. Our comparison does not involve any fitting parameters.

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Cite

@article{arxiv.cond-mat/0401031,
  title  = {Reply to Comment (cond-mat/0311174)},
  author = {V. M. Pudalov and M. E. Gershenson and H. Kojima and G. Brunthaler and G. Bauer},
  journal= {arXiv preprint arXiv:cond-mat/0401031},
  year   = {2007}
}

Comments

4 pages, 3 figures. More data included