Related papers: Reply to Comment (cond-mat/0311174)
We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature,…
We study interaction-induced quantum correction to the conductivity tensor of electrons in two dimensions for arbitrary T tau, where T is the temperature and tau the transport mean free time. A general formula is derived, expressing the…
We have studied temperature dependence of both diagonal and Hall resistivity in the vicinity of $\nu=1/2$. Magnetoresistance was found to be positive and almost independent of temperature: temperature enters resistivity as a logarithmic…
We have studied the temperature dependence of diagonal conductivity in high-mobility two-dimensional samples at filling factors $\nu=1/2$ and 3/2 at low temperatures. We observe a logarithmic dependence on temperature, from our lowest…
It is well known that electron-electron interaction in disordered systems leads to logarithmically divergent Altshuler-Aronov corrections to conductivity at low temperatures ($T\tau\ll 1$; $\tau$ is the elastic mean-free time). This paper…
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high…
We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and…
In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental…
We derive a general formalism for evaluating the high-frequency limit of the thermoelectric power of strongly correlated materials, which can be straightforwardly implemented in available first principles LDA+DMFT programs. We explore this…
We obtain the frequency and temperature dependence of the conductivity for (disordered) solids, where the temperature dependence is defined in terms of the related thermodynamic state function in exponential (or power law, etc.) forms. The…
On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the…
We study the interaction-induced quantum correction \delta\sigma_{\alpha\beta} to the conductivity tensor of electrons in two dimensions for arbitrary T\tau (where T is the temperature and \tau the transport scattering time), magnetic…