Related papers: Reply to Comment (cond-mat/0311174)
We apply a recent quasiparticle model for the electronic properties of metallic helimagnets to calculate the transport properties of three-dimensional systems in the helically ordered phase. We focus on the ballistic regime tau^2 T…
Finite-temperature calculations are relevant for rationalizing material properties yet they are computationally expensive because large system sizes or long simulation times are typically required. Circumventing the need for performing many…
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature…
The thermal accommodation coefficient $\alpha$ has been assumed, although lacking any experimental proof, to be near unity for most gases so far, which denotes no influence. However, it plays a contributing role in the field of the…
We study the electric conductivity of hot QCD matter at various temperatures T within the off-shell parton-hadron-string dynamics transport approach for interacting partonic, hadronic or mixed systems in a finite box with periodic boundary…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
Transition temperature data obtained as a function of particle density in the $^4$He-Vycor system are compared with recent theoretical calculations for 3D Bose condensed systems. In the low density dilute Bose gas regime we find, in…
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…
We present here a simple qualitative model that interpolates between the high and low temperature properties of quasi-1D conductors. At high temperatures we argue that transport is governed by inelastic scattering whereas at low…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
Thermoelectric properties of the type-I clathrates Ba$_8$Cu$_x$Si$_{46-x}$ ($3.6 \leq x \leq 7$, $x$ = nominal Cu content) are investigated both experimentally and theoretically. The polycrystalline samples are prepared either by melting,…
Highly segmented calorimeters represent a modern trend in experimental particle physics aimed at improving the energy resolution with the particle flow reconstruction. The widely used and cost-effective solution is the structure assembled…
We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BT\tau /\hbar $ $>1$. It is shown that the 'metallic' behaviour of…