English

Analysis of the resistance in p-SiGe over a wide temperature range

Strongly Correlated Electrons 2015-06-24 v1 Disordered Systems and Neural Networks

Abstract

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate 1/\td(E,T)1/\td(E,T), each dominating in a limited temperature range.

Keywords

Cite

@article{arxiv.cond-mat/0107369,
  title  = {Analysis of the resistance in p-SiGe over a wide temperature range},
  author = {V. Senz and T. Ihn and T. Heinzel and K. Ensslin and G. Dehlinger and D. Grützmacher and U. Gennser and E. H. Hwang and S. Das Sarma},
  journal= {arXiv preprint arXiv:cond-mat/0107369},
  year   = {2015}
}

Comments

4 pages with 5 figures