Related papers: Coulomb screening and scattering in atomically thi…
Correlations between electrons and the effective dimensionality are crucial factors that shape the properties of an interacting electron system. For example, the onsite Coulomb repulsion, U, may inhibit, or completely block the intersite…
Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We…
We study the screening of the Coulomb interaction in a quasi one-dimensional superconductor given by the presence of either a one- or a two-dimensional non-interacting electron gas. To that end, we derive an effective low-energy phase-only…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit…
Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…
The Coulomb correction (difference from the 1st Born approximation) to the Moli\`{e}re screening angle in multiple Coulomb scattering theory is evaluated with the allowance for inelastic contribution. The controversy between dominance of…
We present a theoretical study of the inelastic scattering of vortex electrons by a hydrogen atom. In our study, special emphasis is placed on the effects of the Coulomb interaction between a projectile electron and a target atom. To…
Exact solutions of the Schr\"odinger equation for the Coulomb potential are used in the scope of both stationary and time-dependent scattering theories in order to find the parameters which define regularization of the Rutherford…
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
A simple method for taking into account the multiple Coulomb scattering in construction of a separatrix (the line separating the regions of runaway and decelerating electrons in an electric field) is described. The desired line is obtained…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
We consider two quantum coherent conductors interacting weakly via long range Coulomb forces. We describe the interaction in terms of two-particle collisions described by a two-particle scattering matrix. As an example we determine the…
We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the…
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…
We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic systems such as 2D GaAs electron or hole quantum wells or gated…
We study localization phenomena in two dimensional systems of charged particles in the presence of a metallic ground plane with a particular focus on the superconductor-insulator transition. The ground plane introduces a screening of the…
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the…
A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution…