Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.
@article{arxiv.1605.07568,
title = {Viable route towards large-area two dimensional MoS2 using magnetron sputtering},
author = {Hassana Samassekou and Asma Alkabsh and Milinda Wasala and Miller Eaton and Aaron Walber and Andrew Walker and Olli Pitkänen and Krisztian Kordas and Saikat Talapatra and Thushari Jayasekera and Dipanjan Mazumdar},
journal= {arXiv preprint arXiv:1605.07568},
year = {2017}
}