Related papers: Coulomb screening and scattering in atomically thi…
One of the most striking features of novel 2D semiconductors (e.g., transition metal dichalcogenide monolayers or phosphorene) is a strong Coulomb interaction between charge carriers resulting in large excitonic effects. In particular, this…
Employing a real time effective action formalism we analyze electron transport and current fluctuations in comparatively short coherent conductors in the presence of electron-electron interactions. We demonstrate that, while Coulomb…
We investigate the instabilities that may lead to the breakdown of the Luttinger liquid in the small-diameter (5,0) nanotubes, paying attention to the competition between the effective interaction mediated by phonon-exchange and the Coulomb…
The conductance of systems containing two tunnel point-contacts and a single subsurface scatterer is investigated theoretically. The problem is solved in the approximation of s-wave scattering giving analytical expressions for the wave…
The dielectric environment surrounding semiconductors plays a crucial role in determining device performance, a role that becomes especially pronounced in atomically thin semiconductors where charge carriers are confined within a few atomic…
This paper presents an analytical study of the coexistence of different transport regimes in quasi-one-dimensional surface-disordered waveguides (or electron conductors). To elucidate main features of surface scattering, the case of two…
Multiple Coulomb Scattering (MCS) is a well known phenomenon occurring when charged particles traverse materials. Measurements of muons traversing low $Z$ materials made in the MuScat experiment showed that theoretical models and simulation…
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb…
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting…
We present a theory for Coulomb drag between two mesoscopic systems. Our formalism expresses the drag in terms of scattering matrices and wave functions, and its range of validity covers both ballistic and disordered systems. The…
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…
Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., arXiv:2309.02832],…
We present a unifying picture of the compact, dense and dilute phases of two-dimensional polymers. The lattice dependence of the scaling exponents for compact polymers is reconciled with their universality in the dense and dilute case. In…
Particle track reconstruction capabilities of the silicon tracking detector system have been studied. As the multiple Coulomb scattering (MCS) induces unavoidable uncertainties on the coordinate measurement, the corresponding error…
We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 um) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the…
Recent experiments performed on weakly pinched quantum point contacts, have shown a resistance that tend to decrease at low source drain voltage. We show that enhanced Coulomb interactions, prompt by the presence of the point contact, may…
We consider elastic reflection and transmission of electrons by a disordered system characterized by a $2N\!\times\!2N$ scattering matrix $S$. Expressing $S$ in terms of the $N$ radial parameters and of the four $N\!\times\!N$ unitary…
Transport properties of narrow two-dimensional conducting wires in which the electron scattering is caused by side edges' roughness have been studied. The method for calculating dynamic characteristics of such conductors is proposed which…
Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…
We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potential (or gate voltage) from the strongly insulating to the metallic regime. Power spectra of the fluctuations decay with two distinct…